Paper Activities　(before 2007)

1-1）International jouranals
1. Surface electronic structures of the Si(001)2x3-Ag surface, H. W. Yeom, I. Matsuda, K. Tono and T. Ohta, Phys. Rev. B 57, 3949 (1998).
2. Electronic structure of the Si-rich 3C-SiC(001)3x2 surface, H. W. Yeom, Y. -C. Chao, I. Matsuda, S. Hara, S. Yoshida and R. I. G. Uhrberg, Phys. Rev. B 58, 1 (1998).
3. Adsorption of acetylene and ethylene on the Si(001)2x1 surface studied by NEXAFS and UPS, F. Matsui, H. W. Yeom, A. Imanishi, K. Isawa, I. Matsuda and T. Ohta, Surf. Sci. 401, L413 (1998).
4. Electronic structure of the Si(001)c(6x2)-Ag surface studied by angle-resolved photoemission spectroscopy, I. Matsuda, H. W. Yeom, K. Tono and T. Ohta, Phys. Rev. B 59, 15784 (1999).
5. Angle-resolved photoemission study of the electronic structure development during the Ag growth on the Si(001) surface, I. Matsuda, H. W. Yeom, K. Tono and T. Ohta, Surf. Sci. 438, 231 (1999).
6. Instability and charge density wave of metallic quantum chains on a silicon surface, H. W. Yeom, S. Takeda, E. Rotenberg, I. Matsuda, K. Horikoshi, J. Schaefer, C. M. Lee, S. D. Kevan, T. Ohta, T. Nagao and S. Hasegawa, Phys. Rev. Lett. 82, 4898 (1999).
7. Atomic and electronic-band structures of anomalous carbon dimers on 3C-SiC(001)-c(2x2), H. W. Yeom, M. Shimomura, J. Kitamura, S. Hara, K. Tono, I. Matsuda, B. S. Mun, W. A. R. Huff, S. Kono, T. Ohta, S. Yoshida, H. Okushi, K. Kajimura and C. S. Fadley, Phys. Rev. Lett. 83, 1640 (1999).
8. Hydrogen-induced 3x1 phase of the Si-rich 3C-SiC(001) surface, H. W. Yeom, I. Matsuda, Y. -C. Chao, S. Hara, S. Yoshida and R. I. G. Uhrberg, Phys. Rev. B 61 R2417 (2000).
9. Adsorption and reaction of acetylene and ethylene on the Si(001)2x1 surface, F. Matsui, H. W. Yeom, I. Matsuda and T. Ohta, Phys. Rev. B 62, 5036 (2000).
10. Electronic structures of the Si(001) surface with Pb adsorbates, K. Tono, H. W. Yeom, I. Matsuda and T. Ohta, Phys. Rev. B 61, 15 866 (2000).
11. Growth and electron quantization of the metastable silver film on Si(001), I. Matsuda, H. W. Yeom, T. Tanikawa, K. Tono T. Nagao, S. Hasegawa and T. Ohta, Phys. Rev. B 63, 125325 (2001).
12. Fermi surface nesting and structural transition on a metal surface: In/Cu(001), T. Nakagawa, G. I. Bioshin, H. Fujioka, H. W. Yeom, I. Matsuda, N. Takagi, M. Nishijima, and T. Aruga, Phys. Rev. Lett. 86, 854 (2001).
13. Interaction of the metastable molecular oxygen with the dangling bonds of a Si(111)7x7 surface, K. Sakamoto, M. Hirano, H. Takeda, S. T. Jemander, I. Matsuda, K. Amemiya, T. Ohta, W. Uchida, G. V. Hansson and R. I. G. Uheberg, J. Elec. Spec. and Rel. Phen. accepted.
14. Growth mode and electrical conductance of Ag atomic layers on Si(001) surface, T. Tanikawa, I. Matsuda, T. Nagao, and S. Hasegawa, Surf. Sci. 493, 389 (2001).
15. Correspondence of experimental surface electronic structure of the Si(113)3x2 with structure models, K. S. An, C. C. Hwang, H. S. Kim, C. -Y. Parks, I. Matsuda, H. W. Yeom, S. Suga, and A. Kakizaki, Surf. Sci. 478, 123 (2001).
16. Electronic structures and Ag-induced superstructures on Si(111) surface studied by angle-resolved photoemission spectroscopy and scanning tunneling microscopy, X. Tong, S. Ohuchi, N. Sato, T. Tanikawa, T. Nagao, I. Matsuda, Y. Aoyagi, and S. Hasegawa, Phys. Rev. B 64, 205316 (2001).
17. High-resolution photoemission study of the discommensurate (5.55 x 5.55)-Cu/Si(111) surface layer, H.-J. Neff, I. Matsuda, T. Greber, and J. Osterwalder, Phys. Rev. B 64, 235415 (2001).
18. In-plane dispersion of the quantum-well states of the epitaxial silver films on silicon, I. Matsuda, T. Ohta, and H. W. Yeom, Phys. Rev. B 65, 085327 (2002).
19. The study of the quantum-well states in the ultra-thin silver film on the Si surface　(invited paper), I. Matsuda and H. W. Yeom, J. Elec. Spec. Rel. Phen. 126, 101 (2002).
20. STM observation of Si(111)-α-√3×√3-Sn at low temperature, H. Morikawa, I. Matsuda, and S. Hasegawa, Phys. Rev. B 65, 201308 (R) (2002).
21. Evidence of asymmetric dimers down to 40 K at the clean Si(100) surface, G. LeLay, A. Cricenti, C. Ottaviani, P. Perfetti, T. Tanikawa, I. Matsuda, S. Hasegawa, Phys. Rev. B 66,153317 (2002).　
22. Electrical conduction through surface superstructures measured by microscopic four-point probes, S. Hasegawa, I. Shiraki, F. Tanabe, R. Hobara, T. Kanagawa, T. Tanikawa, I. Matsuda, C. L. Petersen, T. M. Hansen, P. Boggild, F. Grey, Surf. Rev. and Lett., 10, 963 (2003).
23. An electronic evidence of asymmetry in the Si(111) √3×√3-Ag structure, I. Matsuda, H. Morikawa, C. Liu, S. Ohuchi, S. Hasegawa, T. Okuda, T. Kinoshita, C. Ottaviani, A. Cricenti, M. D’angelo, P. Soukiassian, and G. L. Lay, Phys. Rev. B 68, 085407 (2003).
24. Si(111) √21×√21-(Ag,Cs) surface studied by Scanning Tunneling Microscopy and angle-resolved photoemission spectroscopy, C. Liu, I. Matsuda, H. Morikawa, T. Okuda, T. Kinoshita, and S. Hasegawa, Japan. J. Appl. Phys., 42, 4659 (2003).
25. Electronic structure of the monolayer and double-layer Ge on Si(001), H. W. Yeom, J. W. Kim, K. Tono, I. Matsuda, and T. Ohta, Phys. Rev. B. 67, 085310 (2003)
26. Step edges as reservoirs of adatom gas on a surface, M. Ueno, I. Matsuda, C. Liu, and S. Hasegawa, Japan. J. Appl. Phys., 42, 4894 (2003).
27. Reinvestigation of the band structure of the Si(111)5x2 Au surface，I. Matsuda, M. Hengsberger, F. Baumberger, T. Greber, H. W. Yeom, and J. Osterwalder, Phys. Rev. B 68, 195319 (2003).
28. An anisotropy measurement of quasi-one-dimensional surface state conductance by rotational square micro four-point probe method, T. Kanagawa, R. Hobara, I. Matsuda, T. Tanikawa, A. Natori, and S. Hasegawa, Phys. Rev. Lett. 91, 036805 (2003).
29. Surface-state electrical conductivity at a metal-insulator transition on silicon, T. Tanikawa, I. Matsuda, T. Kanagawa, and S. Hasegawa, Phys. Rev. Lett., 93, 016801 (2004).
30. Non-Metallic Transport Property of the Si(111)7×7 Surface, T. Tanikawa, K. Yoo, I. Matsuda, S. Hasegawa and Y. Hasegawa, Phys. Rev. B 68, 113303 (2003).
31. Variable-Temperature Micro-Four-Point Probe Method for Surface Electrical Conductivity Measurements, T. Tanikawa, I. Matsuda, R. Hobara, and S. Hasegawa, e-Journal of Surface Science and Nanotechnology, 1, 50 (2003).
32. Formation of Facet Structures by Au Adsorption on Vicinal Si(111) Surfaces, H. Okino, I. Matsuda, T. Tanikawa, and S. Hasegawa, e-Journal of Surface Science and Nanotechnology, 1, 84 (2003).
33. Two-Dimensional Liquid-Solid Phase Transition Observed on Atomic Scale , C. Liu, S. Yamazaki, R. Hobara, I. Matsuda, and S. Hasegawa, Phys. Rev. B 71, 041310(R) (2005).
34. Direct observation of soliton dynamics in charge density waves on a quasi-one-dimensional metallic surface, H. Morikawa, I. Matsuda, and S. Hasegawa, Phys. Rev. B 70, 085412 (2004).
35. The effective mass of a free-electron-like surface state of the Si(111)√3×√3-Ag investigated by photoemission and scanning tunneling spectroscopies, T. Hirahara, I. Matsuda, M. Ueno, and S. Hasegawa, Surf. Sci. 563, 191 (2004).
36. Brillouin-Zone Selection for Fermi Rings of the Si(111)√3 × √3-Ag Surface, T. Hirahara, I. Matsuda, and S. Hasegawa, e-Journal of Surface Science and Nanotechnology, 2, 141 (2003).
37. Electrical Resistance of a Monatomic Step on a Crystal Surface, I. Matsuda, M. Ueno, T. Hirahara, R. Hobara, H. Morikawa, and S. Hasegawa, Phys. Rev. Lett. 93, 236801 (2004).
38. Non-metallic transport of a quasi-one-dimensional metallic Si(557)-Au surface, H. Okino, R. Hobara, I. Matsuda, T. Kanagawa, and S. Hasegawa, Phys. Rev. B 70, 113404 (2004).
39. Quantum-Well States in Ultra-Thin Metal Films on Semiconductor Surfaces (a review paper), I. Matsuda, T. Tanikawa, S. Hasegawa, H. W. Yeom, K. Tono, and T. Ohta, e-Journal of Surface Science and Nanotechnology 2, 169 (2004).
40. Electronic Transport in Multiwalled Carbon Nanotubes Contacted with Patterned Electrodes, R. Hobara, S. Yoshimoto, T. Ikuno, M. Katayama, N. Yamauchi, W. Wongwiriyapan, S. Honda, I. Matsuda, S. Hasegawa, and K. Oura: Japanese Journal of Applied Physics 43, L1081 (2004).
41. Successive Phase Transitions Induced by Ca and Sr Adsorptions on a Si(111) surface, F. Shimokoshi, I. Matsuda, S. Hasegawa, and S. Ino, e-Journal of Surface Science and Nanotechnology 2, 178 (2004).
42. Long-periodic modulations in the linear chains of Tl atoms on Si(100), A.A. Saranin, A.V. Zotov, I.A. Kuyanov, V.G. Kotlyar, M. Kishida, Y. Murata, H. Okado, I. Matsuda, H. Morikawa, N. Miyata, S. Hasegawa, M. Katayama, and K. Oura, Phys. Rev. B 71, 165307 (2005).
43. Evolution of Fermi surface by electron filling into a free-electron-like surface state, I. Matsuda, T. Hirahara, M. Konishi, C. Liu, H. Morikawa, M. D'angelo, S. Hasegawa, T. Okuda, and T. Kinoshita, Phys. Rev. B 71, 235315 (2005).
44. In situ resistance measurements of epitaxial cobalt silicide nanowires on Si(110), H. Okino, I. Matsuda, R. Hobara, Y. Hosomura, S. Hasegawa, and P. A. Bennett: Applied Physics Letters, 86, 233108 (2005).
45. Exploiting Metal Coating of Carbon Nanotubes for Scanning Tunneling Microscopy Probes, Y. Murata, S. Yoshimoto, M. Kishida, D. Maeda, T. Yasuda, T. Ikuno, S. Honda, H. Okado, R. Hobara, I. Matsuda, S. Hasegawa, K. Oura, and M. Katayama, Japanese Journal of Applied Physics, 44, 5336-5338 (2005).
46. STM observation at initial stage of Cs adsorption on Si(111)-√3x√3-Ag surface, C. Liu, I. Matsuda, and S. Hasegawa: Surface and Interface Analysis 37, 101 (2005).
47. STM observation of the Si(111)-c(12×2)-Ag surface, N. Miyata, I. Matsuda, M. D'angelo, H. Morikawa, T. Hirahara, and S. Hasegawa: e-Journal of Surface Science and Nanotechnology 3, 151 (2005).
48. Alkali metal-induced Si(111)√21x√21 structure: the Na case, M. D'angelo, M. Konishi, I. Matsuda, C. Liu, S. Hasegawa, T. Okuda, and T. Kinoshita, Surf. Sci. 590, 162-172 (2005).
49. A √21x√21 phase formed by Na adsorption on Si(111)√3x√3-Ag surface and its electronic structure, M. Konishi, I. Matsuda, C. Liu, H. Morikawa, and S. Hasegawa: e-Journal of Surface Science and Nanotechnology 3, 107 (2005).
50. Electrical Characterization of Metal-Coated Carbon-Nanotube Tip, S. Yoshimoto, Y. Murata, R. Hobara, I. Matsuda, M. Kishida, H. Konishi, T. Ikuno, D. Maeda, T. Yasuda, S. Honda, H. Okado, K. Oura, M. Katayama, and S. Hasegawa, Japanese Journal of Applied Physics 44, L1563 (2005).
51. Coating Carbon Nanotubes with Compound Ultrathin Film: A Novel Route to Functional SPM tips, M. Kishida, H. Konishi, Y. Murata, D. Maeda, T.Yasuda, T. Ikuno, S. Honda, M. Katayama, S. Yoshimoto, R. Hobara, I. Matsuda, and S. Hasegawa, e-Journal of Surface Science and Nanotechnology 3, 417-420 (2005).
52. Resistance measurements of metallic silicide nanowires on a Si substrate with a four-tip scanning tunneling microscope, H. Okino, I. Matsuda, R. Hobara, Y. Hosomura, S. Hasegawa, and P. A. Bennett, e-Journal of Surface Science and Nanotechnology 3, 362-366 (2005).
53. Electrical Conduction on Various Au/Si(111) Surface Superstructures, S. Yamazaki, I. Matsuda, H. Okino, H. Morikawa, and S. Hasegawa, e-Journal of Surface Science and Nanotechnology 3, 497-502 (2005).
54. Observation of Quantum Confinement in Ge nanodots on an oxidized Si surface, A. Konchenko, I. Matsuda, S. Hasegawa, Y. Nakamura, and M. Ichikawa, Phys. Rev. B 73, 113311(2006).
55. Electrical Conduction through a Monatomic Step, I. Matsuda, T. Hirahara, M. Ueno, R. Hobara, and S. Hasegawa, Journal de Physique IV 132, 57 (2006).
56. Synthesis of Metal-Alloy Nanowires toward Functional Scanning Probe Microscope, H. Konishi, S. Honda, M. Kishida, Y. Murata, T. Yasuda, D. Maeda, K. Tomita, K. Motoyoshi, S. Yoshimoto, R. Hobara, I. Matsuda, J.-G. Lee, H. Mori, K. Oura, S. Hasegawa, and M. Katayama, Japanese Journal of Applied Physics, 45, 3690 (2006).
57. Quantum regulation of Ge nanodot state by controlling barrier of the interface layer, Y. Nakayama, I. Matsuda, S. Hasegawa, and M. Ichikawa, Applied Physics Letters, 88, 253102 (2006).
58. Self-Assembly of Two-Dimensional Nanoclusters: From Surface Molecules to Surface Superstructure, C. Liu, I. Matsuda, M. D'angelo, S. Hasegawa, J. Okabayashi, S. Toyoda, and M. Oshima, Phys. Rev. B 74, 235420 (2006).
59. Interaction between the adatoms-induced localized state and the quasi-two-dimensional electron gas, C. Liu, I. Matsuda, R. Hobara, and S. Hasegawa, Phys. Rev. Lett. 96, 036803 (2006).
60. Direct measurement of the Hall resistance of a free-electron-like surface state, T. Hirahara, I. Matsuda, R. Hobara, S. Yoshimoto, and S. Hasegawa, Phys. Rev. B. 73, 235332 (2006).
61. Role of Spin-Orbit Coupling and Hybridization Effects in the Electronic Structure of Ultrathin Bi Films, T. Hirahara, T. Nagao, I. Matsuda, G. Bihlmayer, E. V. Chulkov, Yu. M. Koroteev, P. M. Echenique, M. Saito, and S. Hasegawa, Phys. Rev. Lett. 97, 146803 (2006).
62. Quasi-one-dimensional quantized states in an epitaxial Ag film on a one-dimensional surface superstructure, N. Nagamura, I.Matsuda, N.Miyata, T. Hirahara, T. Uchihashi, and S. Hasegawa, Phys. Rev. Lett., 96, 256801 (2006)

1-2）国内論文
83. The study of the quantum-well states in the ultra-thin silver film on the Si surface(半導体表面上金属超薄膜の量子井戸状態の研究)、松田巌、Han Woong Yeom、谷川雄洋、登野健介、長谷川修司、太田利明、 PF　ニュース（PF news）, 19, 26 (2001).
84. ミクロな４端子プローブによる表面電気伝導の測定、長谷川修司、白木一郎、田邊輔仁、保原麗、金川泰三、谷川雄洋、松田巌、Christian L. Petersen、Torben M. Hanssen、Peter Boggild、Francois Grey, 表面科学 23 (12) (2002) 740.
85. 半導体表面上金属超薄膜の量子井戸状態の研究、松田巌、Han Woong Yeom、谷川雄洋、登野健介、長谷川修司、太田利明、表面科学 23、509　(2002). (日本表面科学会平成15年度奨励賞受賞論文)
86 . ４探針ＳＴＭの開発と表面電子輸送の測定, 長谷川修司、白木一郎、田邊輔仁、保原麗、金川泰三、松田巌、電子顕微鏡、38, 36 (2003).
87 . 表面上の２次元吸着原子ガス相と内殻光電子分光, 上野将司、松田巌、劉燦華、原沢あゆみ、奥田太一、木下豊彦、長谷川修司, 表面科学 24, 556 (2003).
88 . シリコン表面上での電荷密度波の格子整合効果とソリトンダイナミクス, 守川春雲、松田巌、長谷川修司, 表面科学、25, 407 (2004). (日本表面科学会平成17年度論文賞受賞論文)
89 . 注目の論文「金属 - 単分子 - 金属接合の構造および電子状態の直接観察」, 松田巌, 化学　59(No.10), 63 (2004).
90. 表面物性工学ハンドブック(第２版) （分担執筆）、「表面原子鎖」松田巌 (2007).　
91. Au/Si(111)表面超構造のガラス・結晶化転移での電気伝導の研究, 山崎詩郎、松田巌、沖野泰之、守川春雲、長谷川修司, 表面科学 26, 468-473 (2005).
92. 結晶表面上単原子ステップの電気抵抗, 松田巌、上野将司、平原徹、保原麗、守川春雲、劉燦華、長谷川修司, 表面科学 27, 182-187 (2006).
93. 極薄Si酸化膜上Geナノドットの界面構造と閉じ込めポテンシャル、中山泰生，松田巌，長谷川修司，市川昌和、表面科学　27, 523 (2006).
94. 吸着原子誘起の局在状態と表面自由電子ガスとの相互作用, 劉燦華、松田巌、保原麗、長谷川修司, 表面科学　27 (12), 702-707 (2006).